a d v a n c e d s e m i c o n d u c t o r, i n c. rev. b 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units bv ceo i c = 25 ma 16 v bv ces i c = 5.0 ma 36 v bv ebo i e = 1.0 ma 4.0 v i cbo v cb = 15 v 1.0 ma i cer v ce = 10 v r be = 80 ? 0.5 ma h fe v ce = 5.0 v i c = 100 ma 40 200 --- c ob v cb = 7.5 v f = 1.0 mhz 10 pf p g c v cc = 12.5 v p out = 2.0 w f = 470 mhz 10 60 db % npn silicon rf power transistor ulbm2sl description: the asi ulbm2sl is designed for class c, fm land mobile applications up to 470 mhz. features: ? common emitter ? p g = 10 db at 2.0 w/470 mhz ? omnigold ? metalization system maximum ratings i c 0.75 a v cbo 36 v v cer 16 v v ces 36 v v ebo 4.0 v p diss 5.0 w @ t c = 25 c t j -65 c to +200 c t stg -65 c to +150 c jc 35.0 c/w package style .280 4l pill order code: asi10678 minimum inches / mm .004 / 0.10 .275 / 6.99 .050 / 1.27 b c d e f a maximum .285 / 7.24 .060 . 1.52 .130 / 3.30 .006 / 0.15 inches / mm 1.055 / 26.80 dim .220 / 5.59 .230 / 5.84 .118 / 3.00 d e f ?b ?c a c b e e
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